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Lecture #41 OUTLINE Modern MOSFETs: • The short-channel effect • Source/drain structure • Drain-induced barrier lowering • Excess current effects Reading: Chapter 19.1, 19.2  Spring 2007  EE130 Lecture 41,
Lecture #41 OUTLINE Modern MOSFETs: • The short-channel effect • Source/drain structure • Drain-induced barrier lowering • Excess current effects Reading: Chapter 19.1, 19.2 Spring 2007 EE130 Lecture 41,
Lecture #19 OUTLINE • pn junctions (cont’d) – Charge control model Reading: Finish Chapter 6.3  Spring 2007  EE130 Lecture 19, Slide 1
Lecture #19 OUTLINE • pn junctions (cont’d) – Charge control model Reading: Finish Chapter 6.3 Spring 2007 EE130 Lecture 19, Slide 1
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Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: • Structure and operation Reading: Chapter 17.1  Spring 2007  EE130 Lecture 35, Slide 1
Lecture #35 OUTLINE The MOS Capacitor: Final comments The MOSFET: • Structure and operation Reading: Chapter 17.1 Spring 2007 EE130 Lecture 35, Slide 1
Lecture #12 OUTLINE • Metal-semiconductor contacts (cont.) – I-V characteristics  Reading: Finish 14.2  Spring 2007  EE130 Lecture 12, Slide 1
Lecture #12 OUTLINE • Metal-semiconductor contacts (cont.) – I-V characteristics Reading: Finish 14.2 Spring 2007 EE130 Lecture 12, Slide 1
Lecture #10 OUTLINE • Poisson’s Equation • Work function  • Metal-Semiconductor Contacts – equilibrium energy-band diagram – depletion-layer width Read: Chapter 5.1.2,14.1, 14.2  Spring 2007  EE130 Lecture 10, Slide.
Lecture #10 OUTLINE • Poisson’s Equation • Work function • Metal-Semiconductor Contacts – equilibrium energy-band diagram – depletion-layer width Read: Chapter 5.1.2,14.1, 14.2 Spring 2007 EE130 Lecture 10, Slide.

Lecture #34 OUTLINE The MOS Capacitor: • MOS non-idealities (cont.) • VT adjustment Reading: Chapter 18.3 Spring 2007 EE130 Lecture 34, Slide 1

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Transcript Lecture #34 OUTLINE The MOS Capacitor: • MOS non-idealities (cont.) • VT adjustment Reading: Chapter 18.3 Spring 2007 EE130 Lecture 34, Slide 1


        	
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