Transcript 2012.9.17
DEE4521 Semiconductor Device Physics Lecture 1: Introduction Prof. Ming-Jer Chen Department of Electronics Engineering National Chiao-Tung University 09/17/2012 1 On this Course Device Physics is Fundamental to EE Disciplines. 2 Pioneers of Device Physics WILLIAM SH O C K L E Y Transistor technology evokes new physics Nobel Lecture, December 11, 1956 JOHN BA R D E E N Semiconductor research leading to the point contact transistor Nobel Lecture, December 11, 1956 WALTER H. BRATTAIN Surface properties of semiconductors Nobel Lecture, December 11, 1956 http://www.nobelprize.org/ 3 Importance of the Course Currently, the significance of device physics dramatically increases. • TSMC is next to the World-Class Level Competitor, Intel. • Moore’s Law will again be Effective in the next 20 Years. (20 nm and beyond; 3-D device; Si ==> Ge, GaAs, etc.) 4 SOP in Class • Experiment Oriented • Thinking • Understanding • Analogy • Skipping (or Subtracting) • Picture • Calculation 5 Contents of the Course 6 1. Physics of Bulk Semiconductors (Si, Ge, and GaAs) - Conduction- and Valence-Band Structures - Electrons and Holes - Energy Band Diagram - Density-of-States (DOS) - Effective Mass - Fermi Level and Thermal Equilibrium - Fermi-Dirac Statistics and Carrier Population 7 2. Physics and Modeling of a Metal-Semiconductor Contact System - Energy Band Diagram - Ohmic Contact - Schottky Contact 8 3. Physics of Carrier Transport in Semiconductors - Energy Band Diagrams - Drift and Diffusion - Scattering Events and Mobility - Generation and Recombination, Optical Injection, and Continuity Equation 9 4. Physics and Modeling of a p-n Junction Diode - Energy Band Diagram - Forward and Reverse Mode - Depletion and Quasi-Neutral Regions - Thermionic Injection Over the Junction Barrier - Tunneling through the Barrier 10 5. Physics and Modeling of a MOS System - Energy Band Diagram - Quantum Confinement - Surface Modulation: Accumulation, Flat-band, Depletion, and Inversion - Electrostatics - C/V 6. MOSFET Device Physics and Modeling 7. Bipolar Transistor Physics and Modeling 12 Some Textbooks Suggested 1. Robert Pierret, “Advanced Semiconductor Fundamentals”, Addison-Wesley, 1987. (Classical; no examples of Q&A) (Purdue) 2. Richard Anderson and Betty Lise Anderson, “Fundamental of Semiconductor Devices”, McGraw-Hill, 1st Edition, 2005. (General; more examples of Q&A) (Ohio) 3. Chenming C. Hu, “Modern Semiconductor Devices for Integrated Circuits”, Pearson Education, 2010. (Concise; enough examples of Q&A) (Berkeley) 4. Donald A. Neamen, “Semiconductor Physics and Devices – Basic Principles” McGraw-Hill, 4th Edition, 2012. (General; more examples of Q&A) (New Mexico) 13 Grading • Four Exams (85%) - three midterm exams - one final exam • Series of Homeworks (15%). 14 Course Website: http://web.it.nctu.edu.tw/~SMS Office Hours (Room 535): 11:00am to 5:00pm, Tuesday, Thursday, Friday TA: L. M. Chang 張立鳴 and C. L. Chen 陳泉利 15